| PART |
Description |
Maker |
| 2SB1114 |
World standard miniature package. High DC current gain hFE=135 to 600.
|
TY Semiconductor Co., Ltd
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| 2SC3439 |
High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) Small package for mounting.
|
TY Semiconductor Co., Ltd
|
| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE.
1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| 2SC3068 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SB930A |
High forward current transfer ratio hFE which has satisfactory linearity.
|
TY Semiconductor Co., Ltd
|
| 2SC3650 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
